LPT-VII Diode-Pumped solidus-rei publicae Laser Demonstrator
Specifications
Semiconductor Laser | |
CW Output Power | ≤ 500 mW |
Polarization | TE |
Centrum Necem | 808 ± 10 nm |
Operatio Temperature Range | 10 ~ 40 °C |
Cras Current | 0~D mA |
nd: YVO4Crystallo | |
ND Doping Concentration | 0.1 ~ 3 atm% |
Dimension | 3×3×1 mm |
idipsum | < λ/10 @632.8 nm |
Coating | AR@1064 um, R<0.1%;808="" t==»">90% |
KTP Crystal | |
Transmissive Necem dolor | 0.35 ~ 4.5 µm |
Electro-Optic Coefficient | r33=36 pm/V |
Dimension | 2×2×5 mm |
Speculum output | |
Diameter | Φ 6 mm |
Radius de Curvature | 50 mm |
He-Ne Alignment Laser | ≤ 1 mW @632.8 nm |
IR Viewing Card | Responsio spectra range: 0.7 ~ 1.6 µm |
Laser Safety Goggles | OD = 4+ for 808 um et 1064 nm |
Optical Power Meter | 2 μW ~ 200 mW, 6 squamae |
PARTES LIST
Nec. | Descriptio | Parameter | Qty |
1 | Optical Rail | with base and dust cover, He-Ne laser potentia copia intus basi installatur | 1 |
2 | Ille-Ne laser Holder | cum carrier | 1 |
3 | Gratia diei et noctis Apertura | f1 mm holewith carrier | 1 |
4 | Filtrum | f10 mm aperturewith carrier | 1 |
5 | Speculum output | BK7, f6 mm R = 50 mm with 4-axis aptabilis possessor et tabellarius | 1 |
6 | KTP Crystal | 2×2-5 mm with 2-axis adjustable possessor et tabellarius | 1 |
7 | Nd:YVO4 Crystallo | 3×3×1 mmwith 2-axis adjustable possessor et tabellarius | 1 |
8 | 808nm LD (laser diode) | ≤ D mWwith IV-axis adjustable possessor et carrier | 1 |
9 | Caput Holder detector | cum carrier | 1 |
10 | Infrared Viewing Card | 750 ~1600 nm | 1 |
11 | Ille-Ne Laser Tube | 1.5mW@632.8 nm | 1 |
12 | Optical Power Meter | 2 μW200 mW (6 septa) | 1 |
13 | Detector capitis | per operculum et post * | 1 |
14 | LD Current Controller | 0~D mA | 1 |
15 | Potentia funiculus | 3 | |
16 | Disciplinam manual | V1.0 | 1 |
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