LEEM-8 Magnetoresistive Effectus Experimentalis Apparatus
Experimenta
1. Stude resistentiae mutationis InSb sensoris vs intensio campi magnetici applicati;empirica formula invenire.
2. Plot InSb sensori resistentia vs campi magnetici intensio.
3. Studere AC characteres InSb sensoris sub debili campo magnetico (frequency-duplicatio effectus).
Specifications
Descriptio | Specifications |
Magneto-resistentia sensoris potentia copia | 0-3 mA Novifacta |
Voltmeter Digital | 0-1.999 V senatus 1 mV |
Digital milli-Teslameter | range 0-199.9 mT, resolutio 0,1 mT |
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